Capacitive Fingerprint Sensor and the Panel Thereof

ABSTRACT

A capacitive fingerprint sensor comprises a fingerprint capacitor, an integrator, a first transistor, a second transistor and a multiplexer. The fingerprint capacitor has a capacitance that is either a valley capacitance C FV  or a ridge capacitance C FR , wherein C FV  is smaller than C FR . The integrator has a reference capacitor C fb . The first transistor is configured to control the fingerprint capacitor during a scan line period. The second transistor is configured to precharge the fingerprint capacitor and to redistribute the charges between the fingerprint capacitor and the reference capacitor C fb . The multiplexer is connected to the integrator for providing a first voltage VA and a second voltage VB, wherein the first voltage VA is greater than the second voltage VB.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a capacitive fingerprint sensor and the panel thereof, and more particularly to a capacitive fingerprint sensor using a plurality of transistors and the panel thereof.

2. Description of the Related Art

A fingerprint sensor is a sensor for recognizing a pattern of a human fingerprint and providing reliable personal identification. The fingerprint sensor is also widely used in portable products such as mobile phones or notebooks in order to achieve security of personal confidential information.

FIGS. 1A and 1B show a hint diagram about the relationship between the human finger and a substrate panel and the corresponding equivalent diagram. Generally, the fingerprint sensor could be implemented in a chip or embedded in an image panel. If the fingerprint sensor is implemented in a chip, the number 13 in FIG. 1A represents a passivation layer, which acts as the dielectric layer of the capacitor C_(d). If the fingerprint sensor is embedded in an image panel, the number 11 in FIG. 1A represents ITO layer, and number 13 represents glass and thin films, such as color filter, polarizer and etc. The following description takes the fingerprint sensor embedded in the image panel as an example. In FIG. 1A, a glass 13, a top metal plate 11 and a substrate 12 are combined in series, and the glass 13 is the place where the human finger will touch. Normally, a capacitor C_(d) exists in the glass 13, and a capacitor C_(p) exists between the top metal plate 11 and the substrate 12. In FIG. 1B, the surface of the human finger has ridges and valleys, such as the ridge 14 and the valley 15. The valley 15 has a distance d₂ away from the glass 13 with a thickness d₁. Based on the structure, an additional capacitor C2 exists between the valley of the human finger and the surface of the glass 13. The equivalent capacitance of the ridge capacitor C_(FR) is related to C1, and the equivalence capacitance of the valley capacitors C_(FV) is related to C1//C2. The capacitances of C1 and C1//C2 are listed as follows:

$C_{1} = \frac{ɛ_{1}A}{d}$ and ${C_{1}//C_{2}} = \frac{1}{\frac{d_{1}}{ɛ_{1}A} + \frac{d_{2}}{ɛ_{2}A}}$

Normally, the ridge capacitor C_(FR) is far greater than the valley capacitors C_(FV).

For sensing the human fingerprint, a readout circuit should be able to discern the difference between the ridge capacitor and the valley capacitor. However, it is not easy to achieve the required accuracy in difference. Some environmental conditions such as noise and cross talk will deteriorate the result.

SUMMARY OF THE INVENTION

The capacitive fingerprint sensor in accordance with one embodiment of the present invention comprises a fingerprint capacitor, a first transistor, a second transistor, an operational amplifier, a reference capacitor, a third transistor and a multiplexer. The fingerprint capacitor has a capacitance that is either a valley capacitance C_(FV) or a ridge capacitance C_(FR), and C_(FV) is smaller than C_(FR). The first transistor has a gate terminal, an input terminal and an output terminal, wherein the gate terminal is controlled by a scan line, the input terminal is connected to the fingerprint capacitor, and the output terminal is connected to a readout line. The second transistor has a gate terminal, an input terminal and an output terminal, wherein the gate terminal is controlled by a first reset line, and the input terminal is connected to the readout line. One input end of the operational amplifier is connected to the output terminal of the second transistor. The reference capacitor C_(fb) is connected to input and output ends of the operational amplifier. The third transistor has a gate terminal, an input terminal and an output terminal, wherein the gate terminal is controlled by a second reset line, and the input and output terminals are connected to the input and output ends of the operational amplifier. The multiplexer is connected to another input end of the operational amplifier, wherein inputs of the multiplexer are connected to a first voltage VA and a second voltage VB.

The capacitive fingerprint sensor in accordance with one embodiment of the present invention comprises a fingerprint capacitor, an integrator, a first transistor, a second transistor and a multiplexer. The fingerprint capacitor has a capacitance that is either a valley capacitance C_(FV) or a ridge capacitance C_(FR), wherein C_(FV) is smaller than C_(FR). The integrator has a reference capacitor C_(fb). The first transistor is configured to control the fingerprint capacitor during a scan line period. The second transistor is configured to precharge the fingerprint capacitor and to redistribute the charges between the fingerprint capacitor and the reference capacitor C_(fb). The multiplexer is connected to the integrator for providing a first voltage VA and a second voltage VB, wherein the first voltage VA is greater than the second voltage VB.

The panel system in accordance with one embodiment of the present invention comprises an active matrix area, a data driver, a scan driver, a readout circuit and an image processing circuit. The active matrix area includes a fingerprint capacitor and a first transistor. The data driver is configured to drive data lines to the capacitive fingerprint sensors. The scan driver is configured to control scan lines to the capacitive fingerprint sensors. The readout circuit is configured to receive readout lines of the capacitive fingerprint sensors and to identify the type of the fingerprint capacitor. The readout circuit includes a second transistor, an operational amplifier, a reference capacitor, a third transistor and a multiplexer. The image processing circuit is connected to the readout circuit.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described according to the appended drawings in which:

FIGS. 1A and 1B show an equivalent circuit of a fingerprint sensor;

FIG. 2 shows the panel in accordance with an embodiment of the present invention;

FIG. 3 shows the fingerprint sensor in accordance with an embodiment of the present invention;

FIG. 4 shows the timing diagram of the circuit in FIG. 3;

FIGS. SA to SC show different phases of the circuit in FIG. 3; and

FIG. 6 shows the readout circuit in accordance with an embodiment of the present invention.

PREFERRED EMBODIMENT OF THE PRESENT INVENTION

FIG. 2 shows a panel in accordance with an embodiment of the present invention. The panel system comprises an active matrix area 25, a data driver 21, a scan driver 22, a readout circuit 23 and an image processing circuit 24. The active matrix area 25 includes a capacitive fingerprint sensor and/or image pixels. The capacitive fingerprint sensor has a plurality of capacitive fingerprint sensor cells 31, each of which can selectively coexist with an image pixel in a pixel unit. The data driver 21 is configured to drive data lines of the image pixels. The scan driver 22 is configured to control scan lines to the capacitive fingerprint sensor cells 31. Normally, the scan line is asserted during the operation period of the capacitive fingerprint sensor cells connected to the scan line. The readout circuit 23 is configured to receive analog signals of readout lines from the capacitive fingerprint sensor cells 31 and to identify the type of the fingerprint capacitor, which indicates the features of the ridge capacitor or valley capacitor. The image processing circuit 24 is connected to the readout circuit 23. The structure in FIG. 2 takes an embedded structure in an image panel as an example. But as known by persons skilled in this art, the structure in FIG. 2 can be easily transformed and applied to be implemented in a chip.

FIG. 3 shows the capacitive fingerprint sensor in accordance with an embodiment of the present invention. The readout circuit 23 includes a control circuit 38. The capacitive fingerprint sensor cell 31 includes a first transistor 32 and a fingerprint capacitor C_(F), which is either a valley capacitance C_(FV) or a ridge capacitance C_(FR), and C_(FV) is smaller than C_(FR). The first transistors 32 situated in the same row of the active matrix area 25 are commonly controlled by a scan line. The first transistor 32 has a gate terminal, an input terminal and an output terminal, wherein the gate terminal is controlled by a scan line, the input terminal is connected to the fingerprint capacitor, and the output terminal is connected to a readout line, which is further connected to an input end of the control circuit 38. The control circuit 38 may be one part of the readout circuit 23, and another part 61 is shown in FIG. 6. The control circuit 38 comprises a second transistor 34, an operational amplifier 36, a reference capacitor C_(fb), a third transistor 35 and a multiplexer 37, wherein the connection of the operational amplifier 36 and the reference capacitor C_(fb) acts like an integrator. The second transistor 34 has a gate terminal, an input terminal and an output terminal, wherein the gate terminal is controlled by a first reset line (Reset1) and the input terminal is connected to the readout line. One input end of the operational amplifier 36 is connected to the output terminal of the second transistor 34. The reference capacitor C_(fb) is connected to input and output ends of the operational amplifier 36. The third transistor 35 has a gate terminal, an input terminal and an output terminal, wherein the gate terminal is controlled by a second reset line (Reset) and the input and output terminals are connected to the input and output ends of the operational amplifier 36. The multiplexer 37 is connected to another input end of the operational amplifier 36, wherein inputs of the multiplexer 36 are connected to a first voltage VA and a second voltage VB. In this embodiment, the voltage VA is greater than the voltage VB.

FIG. 4 shows the timing diagram of the circuit in FIG. 3. Normally, the fingerprint sensors in the same row share the same scan line R_(n), which is asserted throughout the entire operation of the fingerprint sensors in the same row. The timing of one cycle can be divided into precharge (phase one), transition (phase two) and evaluation phases (phase three). The first reset line (Reset1) is used in the precharge and evaluation phases, and the second reset line (Reset) is used in the precharge and transition phases. During the evaluation phase, the readout line selecting (RLS) sequentially transmits data selected from Vout₁ to Vout_(x) to the image processing circuit 24.

FIG. SA shows the equivalent circuit of the fingerprint sensor in the precharge phase. In the precharge phase for the fingerprint sensor 31, the second and third transistors 34 and 35 are turned on, and the multiplexer 36 selects VB, such that the reference capacitor C_(fb) is reset and the second voltage VB is input to the fingerprint capacitor C_(F). In the meanwhile, the charge stored in the fingerprint capacitor is equal to C_(F)×VB.

FIG. 5B shows the equivalent circuit of the fingerprint sensor in the transition phase. In the transition phase for the fingerprint sensor 31, the second transistor 34 is turned off, the third transistors 35 are still turned on, and the multiplexer 36 selects VA to change the output of the operational amplifier 36 from VB to VA.

FIG. 5C shows the equivalent circuit of the fingerprint sensor in the evaluation phase. In the evaluation phase, the second transistor 34 is turned on, the third transistor 35 is still turned off, and the multiplexer 36 still selects VA. In the meanwhile, the extra charge stored in the fingerprint capacitor is transferred to the reference capacitor C_(fb), and the output of the operational amplifier 36 changes its value to

${VA} + \frac{\left( {{VA} - {VB}} \right) \times C_{FR}}{C_{fb}}$ or ${{VA} + \frac{\left( {{VA} - {VB}} \right) \times C_{FV}}{C_{fb}}},$

depending on which capacitance, i.e., ridge capacitance C_(FR) or valley capacitance C_(FV), is connected.

FIG. 6 shows a selecting part of the readout circuit in accordance with an embodiment of the present invention. The readout circuit 23 further comprises a multiplexer 62 and a comparator 61. The selecting part 63 receives data selected from Vout₁ to Vout_(x) and then transmits it to the image processing circuit 24. The input ends of the multiplexer 62 are connected to the data selected from Vout₁ to Vout_(x), and the output end of the multiplexer 62 is connected to the comparator 61, which outputs one bit to the image processing circuit 24. To distinguish the ridge and valley capacitors, the comparator 61 utilizes a threshold voltage V_(REF), and

${{VA} + \frac{\left( {{VA} - {VB}} \right) \times C_{FR}}{C_{fb}}} > V_{REF} > {{VA} + {\frac{\left( {{VA} - {VB}} \right) \times C_{FV}}{C_{fb}}.}}$

Therefore, if the comparator 61 outputs logic high, it means that the data received from the fingerprint sensor implies a ridge capacitor. Otherwise, the data implies a valley capacitor.

The above-described embodiments of the present invention are intended to be illustrative only. Numerous alternative embodiments may be devised by persons skilled in the art without departing from the scope of the following claims. 

1. A capacitive fingerprint sensor, comprising: a sensor cell comprising: a fingerprint capacitor having a capacitance that is either a valley capacitance C_(FV) or a ridge capacitance C_(FR) , and C_(FV) being smaller than C_(FR); and a first transistor having a gate terminal, an input terminal and an output terminal, wherein the gate terminal is controlled by a scan line, the input terminal is connected to the fingerprint capacitor, and the output terminal is connected to a readout line; and a control circuit comprising: a second transistor having a gate terminal, an input terminal and an output terminal, wherein the gate terminal is controlled by a first reset line and the input terminal is connected to the readout line; an operational amplifier, with one input end of the operational amplifier connected to the output terminal of the second transistor; a reference capacitor having capacitance C_(fb) and disposed between input and output ends of the operational amplifier; a third transistor having a gate terminal, an input terminal and an output terminal, wherein the gate terminal is controlled by a second reset line, and the input and output terminals are connected to the input and output ends of the operational amplifier, respectively; and a multiplexer connected to another input end of the operational amplifier, wherein inputs of the multiplexer are connected to a first voltage VA and a second voltage VB.
 2. The capacitive fingerprint sensor of claim 1, which is serially operated in a precharge phase, a transition phase and an evaluation phase.
 3. The capacitive fingerprint sensor of claim 2, wherein in the precharge phase, the scan line and the second reset line are asserted such that the multiplexer outputs the second voltage VB to the fingerprint capacitor.
 4. The capacitive fingerprint sensor of claim 3, wherein in the precharge phase, the first reset line is further asserted.
 5. The capacitive fingerprint sensor of claim 3, wherein in the transition phase, the second reset line is unasserted.
 6. The capacitive fingerprint sensor of claim 5, wherein in the transition phase, the multiplexer output the first voltage VA.
 7. The capacitive fingerprint sensor of claim 2, wherein in an evaluation phase, the scan line and the second reset line are asserted, and the first reset line is unasserted.
 8. A capacitive fingerprint sensor, comprising: a sensor cell comprising: a fingerprint capacitor having a capacitance that is either a valley capacitance C_(FV) or a ridge capacitance C_(FR), wherein C_(FV) is smaller than C_(FR); a first transistor configured to control the fingerprint capacitor during a scan line period; and a control circuit comprising: an integrator having a reference capacitor C_(fb); a second transistor configured to precharge the fingerprint capacitor and to redistribute the charges between the fingerprint capacitor and the reference capacitor C_(fb); and a multiplexer connected to the integrator and the sensor cell for selectively providing a first voltage VA and a second voltage VB, wherein the first voltage VA is greater than the second voltage VB.
 9. The capacitive fingerprint sensor of claim 8, wherein in a precharge phase, the second transistor is configured to precharge the fingerprint capacitor to the second voltage VB.
 10. The capacitive fingerprint sensor of claim 8, which is serially operated in precharge, transition and evaluation phases.
 11. The capacitive fingerprint sensor of claim 10, wherein the integrator further comprises a third transistor connected to the reference capacitor C_(fb) in parallel, and the third transistor is turned on during the precharge and transition phases.
 12. The capacitive fingerprint sensor of claim 10, wherein the second transistor is used in the precharge and evaluation phases.
 13. The capacitive fingerprint sensor of claim 10, wherein the multiplexer outputs the first voltage VA in the transition and evaluation phases, and outputs the second voltage VB in the precharge phase.
 14. The capacitive fingerprint sensor of claim 10, wherein the integrator has an output voltage of ${VA} + \frac{\left( {{VA} - {VB}} \right) \times C_{FR}}{C_{fb}}$ or ${VA} + \frac{\left( {{VA} - {VB}} \right) \times C_{FV}}{C_{fb}}$ during the evaluation phase.
 15. A panel system, comprising: an active matrix area having fingerprint sensor cells, each fingerprint sensor cell comprising: a fingerprint capacitor having a capacitance that is either a valley capacitance C_(FV) or a ridge capacitance C_(FR), and C_(FV) is smaller than C_(FR); and a first transistor having a gate terminal, an input terminal and an output terminal, wherein the gate terminal is controlled by a scan line, the input terminal is connected to the fingerprint capacitor, and the output terminal is connected to a readout line; a scan driver configured to control scan lines to the active matrix area; a readout circuit, comprising: a second transistor having a gate terminal, an input terminal and an output terminal, wherein the gate terminal is controlled by a first reset line and the input terminal is connected to the readout line; an operational amplifier, wherein one input end of the operational amplifier is connected to the output terminal of the second transistor; a reference capacitor C_(fb) connected to input and output ends of the operational amplifier; a third transistor having a gate terminal, an input terminal and an output terminal, wherein the gate terminal is controlled by a second reset line, and the input and output terminals are connected to the input and output ends of the operational amplifier; and a multiplexer connected to another input end of the operational amplifier, wherein inputs of the multiplexer are connected to a first voltage VA and a second voltage VB; and an image processing circuit connected to the readout circuit.
 16. The panel system of claim 15, wherein the readout circuit further comprises an output multiplexer and a comparator, the input end of the output multiplexer is connected to the outputs of the operational amplifier, and the output end of the output multiplexer is connected to the comparator.
 17. The panel system of claim 15, wherein the comparator outputs one bit to the image processing circuit.
 18. The panel system of claim 16, wherein the comparator has a threshold voltage V_(REF)l, and ${{VA} + \frac{\left( {{VA} - {VB}} \right) \times C_{FR}}{C_{fb}}} > V_{REF} > {{VA} + {\frac{\left( {{VA} - {VB}} \right) \times C_{FV}}{C_{fb}}.}}$
 19. The panel system of claim 15, wherein the active matrix area further includes image pixels.
 20. The panel system of claim 15, wherein one scan line is enabled during the operations of the capacitive fingerprint sensors connected to the scan line. 